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igbt highspeedduopackigbtintrenchandfieldstoptechnologywithsoft,fastrecovery anti-paralleldiode ikw40n60h3 600vduopackigbtanddiode highspeedswitchingseriesthirdgeneration datasheet industrialpowercontrol http://
2 ikw40n60h3 highspeedswitchingseriesthirdgeneration rev.2.4,2014-03-12 highspeedduopack:igbtintrenchandfieldstoptechnologywithsoft,fast recoveryanti-paralleldiode features: trenchstop tm technologyoffering ?verylowv cesat ?lowemi ?verysoft,fastrecoveryanti-paralleldiode ?maximumjunctiontemperature175c ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?uninterruptiblepowersupplies ?weldingconverters ?converterswithhighswitchingfrequency keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package ikw40n60h3 600v 40a 1.95v 175c K40H603 pg-to247-3 g c e g c e
3 ikw40n60h3 highspeedswitchingseriesthirdgeneration rev.2.4,2014-03-12 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4 ikw40n60h3 highspeedswitchingseriesthirdgeneration rev.2.4,2014-03-12 maximumratings parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 4.. t dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 6.,. 2.,. ? pulsedcollectorcurrent, t p limitedby t vjmax i cpuls /4.,. ? rsplmddqdcmncprglepc v ce 600v, t vj 175c, t p =1s /4.,. ? diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 2.,. 0.,. ? diodepulsedcurrent, t p limitedby t vjmax i fpuls /4.,. ? ercckgrrcptmjrec v ge ?0. t qfmpragpasgrugrfqrlbrgkc v ge =15.0v, v cc 400v ?jjmucblskcpmdqfmpragpasgrq:/... rgkccrucclqfmpragpasgrq8 3 t t vj =150c t sc 3 q powerdissipation t c =25c powerdissipation t c =100c p tot 1.4,. /31,. u mncprglehslargmlrckncprspc t vj 2.,,,)/53 a qrmpecrckncprspc t stg 33,,,)/3. a qmjbcpglerckncprspc utcqmjbcpgle/,4kk.,.41gl,dpmkaqcdmp/.q 04. a kmslrglermposck1qapcu kvgkskmdkmslrglenpmacqqcq81 m l thermalresistance parameter symbol conditions max.value unit characteristic gerrfcpkjpcqgqrlac hslargmlaqc r th(j-c) .,27 i-u bgmbcrfcpkjpcqgqrlac hslargmlaqc r th(j-c) /,3. i-u rfcpkjpcqgqrlac hslargmlkgclr r th(j-a) 2. i-u
5 ikw40n60h3 highspeedswitchingseriesthirdgeneration rev.2.4,2014-03-12 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage (br)ces v ge =0v, i c =2.00ma 600 - - v collector-emitter saturation voltage cesat v ge =15.0v, i c =40.0a t vj =25c t vj =125c t vj =175c - - - 1.95 2.30 2.50 2.40 - - v diode forward voltage f v ge =0v, i f =20.0a t vj =25c t vj =125c t vj =175c - - - 1.65 1.67 1.65 2.05 - - v gate-emitter threshold voltage ge(th) i c =0.58ma, v ce = v ge 4.1 5.1 5.7 v zero gate voltage collector current k ces v ce =600v, v ge =0v t vj =25c t vj =175c - - - - 40.0 3000.0 a gate-emitter leakage current k ges v ce =0v, v ge =20v - - 100 na transconductance i fs v ce =20v, i c =40.0a - 24.0 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance e ies - 2190 - output capacitance e oes - 112 - reverse transfer capacitance e res - 64 - ce =25v, v ge =0v,f=1mhz pf gate charge s g v cc =480v, i c =40.0a, v ge =15v - 223.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case n e - 13.0 - nh short circuit collector current max. 1000 short circuits time between short circuits: 1.0s k c(sc) v ge =15.0v, v cc 400v, t sc 5s t vj =150c - 235 - a
6 ikw40n60h3 highspeedswitchingseriesthirdgeneration rev.2.4,2014-03-12 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time v d(on) - 19 - ns rise time v r - 33 - ns turn-off delay time v d(off) - 197 - ns fall time v f - 21 - ns turn-on energy g on - 1.10 - mj turn-off energy g off - 0.58 - mj total switching energy g ts - 1.68 - mj v vj =25c, v cc =400v, i c =40.0a, v ge =0.0/15.0v, r g =7.9 , l =90nh, c =60pf l , c fromfig.e energy losses include tail and diode reverse recovery. diode reverse recovery time v rr - 124 - ns diode reverse recovery charge s rr - 0.81 - c diode peak reverse recovery current k rrm - 13.6 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -332 - a/s v vj =25c, v r =400v, i f =20.0a, di f /dt =1000a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time v d(on) - 19 - ns rise time v r - 29 - ns turn-off delay time v d(off) - 227 - ns fall time v f - 22 - ns turn-on energy g on - 1.33 - mj turn-off energy g off - 0.79 - mj total switching energy g ts - 2.12 - mj v vj =175c, v cc =400v, i c =40.0a, v ge =0.0/15.0v, r g =7.9 , l =90nh, c =60pf l , c fromfig.e energy losses include tail and diode reverse recovery. diode reverse recovery time v rr - 190 - ns diode reverse recovery charge s rr - 1.70 - c diode peak reverse recovery current k rrm - 18.5 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -290 - a/s v vj =175c, v r =400v, i f =20.0a, di f /dt =1000a/s
7 ikw40n60h3 highspeedswitchingseriesthirdgeneration rev.2.4,2014-03-12 figure 1. collectorcurrentasafunctionofswitching frequency ( t j 175c, d =0.5, v ce =400v, v ge =15/0v, r g =7,9 ) f ,switchingfrequency[khz] i c ,collectorcurrent[a] 1 10 100 1000 0 20 40 60 80 100 120 t c =80 t c =110 t c =80 t c =110 figure 2. forwardbiassafeoperatingarea ( d =0, t c =25c, t j 175c; v ge =15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 t p =1s 10s 50s 100s 200s 500s dc figure 3. powerdissipationasafunctionofcase temperature ( t j 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 200 225 250 275 300 325 figure 4. collectorcurrentasafunctionofcase temperature ( v ge 15v, t j 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80
8 ikw40n60h3 highspeedswitchingseriesthirdgeneration rev.2.4,2014-03-12 figure 5. typicaloutputcharacteristic ( t j =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 20 40 60 80 100 120 140 160 v ge =21v 19v 17v 15v 13v 11v 9v 7v 5v figure 6. typicaloutputcharacteristic ( t j =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 20 40 60 80 100 120 v ge =21v 19v 17v 15v 13v 11v 9v 7v 5v figure 7. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 5 6 7 8 9 10 11 12 0 20 40 60 80 100 120 140 t j =25c t j =175c figure 8. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t j ,junctiontemperature[c] v ce(sat) ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i c =20a i c =40a i c =80a
9 ikw40n60h3 highspeedswitchingseriesthirdgeneration rev.2.4,2014-03-12 figure 9. typicalswitchingtimesasafunctionof collectorcurrent (ind.load, t j =175c, v ce =400v, v ge =15/0v, r g =7,9 ,testcircuitinfig.e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 10 20 30 40 50 60 70 80 10 100 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionofgate resistor (ind.load, t j =175c, v ce =400v, v ge =15/0v, i c =40a,testcircuitinfig.e) r g ,gateresistor[ ] t ,switchingtimes[ns] 0 5 10 15 20 25 10 100 t d(off) t f t d(on) t r figure 11. typicalswitchingtimesasafunctionof junctiontemperature (ind.load, v ce =400v, v ge =15/0v, i c =40a, r g =7,9 ,testcircuitinfig.e) t j ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 10 100 t d(off) t f t d(on) t r figure 12. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.58ma) t j ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 175 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 typ. min. max.
10 ikw40n60h3 highspeedswitchingseriesthirdgeneration rev.2.4,2014-03-12 figure 13. typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load, t j =175c, v ce =400v, v ge =15/0v, r g =7,9 ,testcircuitinfig.e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofgateresistor (ind.load, t j =175c, v ce =400v, v ge =15/0v, i c =40a,testcircuitinfig.e) r g ,gateresistor[ ] e ,switchingenergylosses[mj] 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofjunctiontemperature (indload, v ce =400v, v ge =15/0v, i c =40a, r g =7,9 ,testcircuitinfig.e) t j ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 e off e on e ts figure 16. typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load, t j =175c, v ge =15/0v, i c =40a, r g =7,9 ,testcircuitinfig.e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 250 300 350 400 450 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e off e on e ts
11 ikw40n60h3 highspeedswitchingseriesthirdgeneration rev.2.4,2014-03-12 figure 17. typicalgatecharge ( i c =40a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 50 100 150 200 250 0 2 4 6 8 10 12 14 16 120v 480v figure 18. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 10 20 30 10 100 1000 c ies c oes c res figure 19. typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage ( v ce 400v,startat t j =25c) v ge ,gate-emittervoltage[v] i c(sc) ,shortcircuitcollectorcurrent[a] 10 12 14 16 18 20 80 120 160 200 240 280 320 360 400 440 480 520 560 figure 20. shortcircuitwithstandtimeasafunctionof gate-emittervoltage ( v ce 400v,startat t j 150c) v ge ,gate-emittervoltage[v] t sc ,shortcircuitwithstandtime[s] 10 11 12 13 14 15 0 3 6 9 12 15
12 ikw40n60h3 highspeedswitchingseriesthirdgeneration rev.2.4,2014-03-12 figure 21. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-7 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: i [s]: 1 0.02540725 1.3e-5 2 0.09179841 1.3e-4 3 0.1302573 1.4e-3 4 0.1893012 0.01830399 5 0.0532358 0.1308576 figure 22. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-7 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: i [s]: 1 0.3399738 1.3e-4 2 0.4445632 1.5e-3 3 0.5814618 0.01821425 4 0.1348257 0.09207449 figure 23. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 800 1000 1200 1400 1600 50 75 100 125 150 175 200 225 250 t j =25c, i f = 40a t j =175c, i f = 40a figure 24. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 800 1000 1200 1400 1600 0.0 0.5 1.0 1.5 2.0 2.5 t j =25c, i f = 40a t j =175c, i f = 40a
13 ikw40n60h3 highspeedswitchingseriesthirdgeneration rev.2.4,2014-03-12 figure 25. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 800 1000 1200 1400 1600 8 10 12 14 16 18 20 22 24 t j =25c, i f = 40a t j =175c, i f = 40a figure 26. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 800 1000 1200 1400 1600 -800 -600 -400 -200 0 t j =25c, i f = 40a t j =175c, i f = 40a figure 27. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 t j =25c t j =175c figure 28. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t j ,junctiontemperature[c] v f ,forwardvoltage[v] 0 25 50 75 100 125 150 175 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i f =10a i f =20a i f =40a
14 ikw40n60h3 highspeedswitchingseriesthirdgeneration rev.2.4,2014-03-12 pg-t o247-3
15 ikw40n60h3 highspeedswitchingseriesthirdgeneration rev.2.4,2014-03-12 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3
16 ikw40n60h3 highspeedswitchingseriesthirdgeneration rev.2.4,2014-03-12 revisionhistory ikw40n60h3 revision:2014-03-12,rev.2.4 previous revision revision date subjects (major changes since last revision) 2.1 2010-06-14 release of final datasheet 2.2 2010-10-14 updated igbt switching conditions 2.3 2013-12-10 new value ices max limit at 175c 2.4 2014-03-12 max ratings vce, tvj 3 25c welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com publishedby infineontechnologiesag 81726munich,germany 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestinfineon technologiesoffice(www.infineon.com). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesin question,pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineon technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered.

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